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| S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters ( p 900 nm). The large active area combined with a flat case gives a high sensitivity at a wide viewing angle Features * Fast response times * Small junction capacitance * * * * * * * High radiant sensitivity Large radiant sensitive area A = 7.5 mm2 Wide angle of half sensitivity = 65 Plastic case with IR filter (950 mm) Suitable for near infrared radiation Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 8632 Applications High speed photo detector Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t5s Tamb 25 C Test condition Symbol VR PV Tj Tstg Tsd RthJA Value 60 215 100 - 55 to + 100 260 350 Unit V mW C C C K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Breakdown Voltage Reverse Dark Current Diode capacitance Test condition IR = 100 A, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Symbol V(BR) Iro CD CD Min 60 2 70 25 40 30 Typ. Max Unit V nA pF pF Document Number 81536 Rev. 1.3, 08-Mar-05 www.vishay.com 1 S186P Vishay Semiconductors Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Open Circuit Voltage Short Circuit Current Reverse Light Current Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Noise Equivalent Power Rise Time Fall Time VR = 20 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm Ee = 1 Test condition mW/cm2, = 950 nm Symbol Vo Ik Ira p 0.5 NEP tr tf 43 Min Typ. 350 38 45 65 950 870 to 1050 4 x 10 -14 Max Unit mV A A deg nm nm W/ Hz ns ns Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm, VR = 5 V 100 100 Typical Characteristics (Tamb = 25 C unless otherwise specified) 1000 I ro - Reverse Dark Current ( nA ) Ira - Reverse Light Current (A) 1000 100 100 10 10 1 =950nm V R=5V V R = 10 V 1 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 0.1 0.01 94 8414 0.1 1 10 94 8403 Ee - Irradiance ( mW/ cm2 ) Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 3. Reverse Light Current vs. Irradiance I ra rel - Relative Reverse Light Current 1.4 Ira - Reverse Light Current (A) 100 1mW/cm2 0.5 mW/cm 2 1.2 VR = 5 V = 950 nm = 950 nm 10 0.2 mW/cm2 0.1 mW/cm 2 0.05mW/cm 2 0.02mW/cm2 1.0 0.8 0.6 0 1 20 40 60 80 100 94 8415 0.1 1 10 100 94 8409 Tamb - Ambient Temperature ( C ) V R - Reverse Voltage ( V ) Figure 2. Relative Reverse Light Current vs. Ambient Temperature Figure 4. Reverse Light Current vs. Reverse Voltage www.vishay.com 2 Document Number 81536 Rev. 1.3, 08-Mar-05 S186P Vishay Semiconductors 80 C D - Diode Capacitance ( pF ) E=0 f = 1 MHz 60 40 20 0 0.1 94 8407 1 10 100 VR - Reverse V oltage ( V ) Figure 5. Diode Capacitance vs. Reverse Voltage S ( l ) rel - Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0 750 850 950 1050 1150 94 8408 l - Wavelength ( nm ) Figure 6. Relative Spectral Sensitivity vs. Wavelength 0 Srel - Relative Sensitivity 10 20 30 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8406 Figure 7. Relative Radiant Sensitivity vs. Angular Displacement Document Number 81536 Rev. 1.3, 08-Mar-05 www.vishay.com 3 S186P Vishay Semiconductors Package Dimensions in mm 96 12196 www.vishay.com 4 Document Number 81536 Rev. 1.3, 08-Mar-05 S186P Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81536 Rev. 1.3, 08-Mar-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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